Associate III - VLSI MDST

Job Summary

We are looking for a Memory Design Engineer with strong fundamentals in advanced-node memory design. The ideal candidate will have hands-on experience in SRAM design, modeling, verification, and circuit design, with exposure to cutting-edge foundry technologies. Experience with Samsung Foundry is mandatory.

Responsibilities

• Design and development of high-performance SRAM and memory circuits at advanced technology nodes.
• Memory circuit design, modeling, and verification across multiple process corners.
• Work on advanced foundry nodes (2nm / 3nm / 4nm); experience on lower nodes is highly preferred.
• Perform detailed circuit simulations, analysis, and debugging to meet PPA targets.
• Collaborate with foundry, layout, and verification teams to ensure robust memory design sign-off.
• Contribute to design reviews and drive solutions based on strong design fundamentals.

Required Skills Qualifications

• 3-8 years of hands-on experience in Memory Design.
• Strong expertise in SRAM design, memory modeling, verification, and circuit design.
• Solid understanding of advanced CMOS design concepts and deep-submicron effects.
• Proven experience working with Samsung Foundry (mandatory).
• Exposure to 2nm / 3nm / 4nm technology nodes; lower-node experience is strongly preferred.
• Strong problem-solving skills with a solid grasp of analog and digital circuit fundamentals.

Disclaimer: This job posting has been aggregated from external source. Role details, content, and availability are subject to change. Applicants are advised to confirm the latest information directly on the company website before applying.